Pb (Zr, Ti,) O, (PZT) films were prepared on the ITO coated glass plates in sol-eel dip-coating process and post-annealing at different temperatures. The structural properties of the films were characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). It is shown that the PZT ferroelectric thin films with (110) preferential orientation and well-crystallized perovskite structure can be obtained after annealing at 680℃ for 30 minutes. The P-E hysteresis loops were measured by the Sawyer-Tower test system with a compensation resistor at room temperature. Values of the remanent polarization (P,) and the coercive electric field (E,) are 19.36C/em2 and 95kV/em, respectively, for the prepared PZT thin films. The relative dielectric constant c' and the dissipation factor tg• of the PZT thin films are equal to 639 and 0.23. respectively, which were measured in a LCR meter.