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The influence of low-temperature Ge seed layer on growth of high-quality Ge epilayer on Si(1 0 0) by ultrahigh vacuum chemical vapor deposition
Journal of Crystal Growth 310 (2008) 2508-2513，-0001，（）：
High-quality Ge epilayer on Si (100) substrate with an inserted low-temperature Ge seed layer and a thin Si0.77Ge0.23 layer was grown by ultrahigh vacuum chemical vapor deposition. The epitaxial Ge layer with surface root-mean-square roughness of 0.7nm and threading dislocation density of 5105 cm 2 was obtained. The influence of low temperature Ge seed layer on the quality of Ge epilayer was investigated. We demonstrated that the relatively higher temperature (3501℃) for the growth of Ge seed layer significantly improved the crystal quality and the Hall hole mobility of the Ge epilayer.
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