-
48浏览
-
0点赞
-
0收藏
-
0分享
-
57下载
-
0评论
-
引用
期刊论文
Optical property of self-assembled InAs quantum dots in Al0.5Ga0.5As barriers grown by molecular beam epitaxy
Journal of Crystal Growth 263(2004)53-57,-0001,():
Photoluminescence (PL) of quantum dots embedded in high potential barriers is studied as functions of barrier thickness and temperature. With the increase of barrier thickness, both the strengthened two-dimensional electron gas (2DEG) structure and strongly localized electron wave functions can increase the carrier recombination. The optical properties of two different-barrier-thickness samples exhibit different characteristics with the decreased measurement temperatures. The PL recombination characteristic of the samples with the barriers adjacent to a Si-doping GaAs layer is different fromthat of samples with the barrier adjacent to an i-GaAs layer.
【免责声明】以下全部内容由[李树玮]上传于[2009年04月12日 16时01分02秒],版权归原创者所有。本文仅代表作者本人观点,与本网站无关。本网站对文中陈述、观点判断保持中立,不对所包含内容的准确性、可靠性或完整性提供任何明示或暗示的保证。请读者仅作参考,并请自行承担全部责任。
本学者其他成果
同领域成果