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Surface diffusion duringlayer growth of SrTiO3 films with pulsed laser molecular beam epitaxy
Journal of Crystal Growth 278(2005)629-632，-0001，（）：
In the layer-by-layer growth regime of SrTiO3 films with pulsed laser molecular beam epitaxy, the relaxation behaviors of RHEED intensity after termination of growth were studied. From the characteristic relaxation times as a function of substrate temperatures, it was revealed that the surface relaxation occurred with low activity energy for diffusion of 0.3 eV and slow relaxation process, which was argued to be attributed to the diffusion of charge-neutral SrTiO3 units.
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