-
32浏览
-
0点赞
-
0收藏
-
0分享
-
39下载
-
0评论
-
引用
期刊论文
Highly oriented growth of n-type ZnO films on p-type single crystalline diamond films and fabrication of high-quality transparent ZnO/diamond heterojunction
Carbon 42 (2004) 317-321,-0001,():
We present the results on the fabrication and characterization of high-quality transparent heterojunction between n-type ZnO film and p-type diamond single crystalline film on the substrate of diamond bulk single crystal. The results indicated that the current density of the fabricated p-n junction reaches 110 A/m2 when the forward bias voltage is 2.5 V, and the turn-on voltage value is about 0.75 V and agreement with the expected value. Moreover, a good rectification characteristic and transparent in the visible light range was obtained in the device.
【免责声明】以下全部内容由[王成新]上传于[2010年09月28日 16时54分20秒],版权归原创者所有。本文仅代表作者本人观点,与本网站无关。本网站对文中陈述、观点判断保持中立,不对所包含内容的准确性、可靠性或完整性提供任何明示或暗示的保证。请读者仅作参考,并请自行承担全部责任。
本学者其他成果
同领域成果