提示
杨德仁
-
50浏览
-
0点赞
-
0收藏
-
0分享
-
157下载
-
0评论
-
引用
期刊论文
Crystallization and Raman Shift of Array-Orderly Silicon Nanowires after Annealing at High Temperature
Japanese Journal of Applied Physics Vol. 43, No. 7A, 2004, pp. 4460-4461，-0001，（）：
Ordered silicon nanowires (SiNWs) with single crystal structure were synthesized using nanochannel-Al2O3 (NCA) and the chemical vapor deposition (CVD) method. Firstly, the SiNWs with nearly amorphous structure were fabricated at 500℃; then the SiNWs with crystalline structure were obtained by annealing an as-received sample at 800 C. The average diameter and length of the SiNWs are 40-70 nm and 10 mm, respectively. The Raman shift related to the crystallization and the amorphous SiNWs was analyzed.
【免责声明】以下全部内容由[杨德仁]上传于[2005年03月08日 17时32分21秒]，版权归原创者所有。本文仅代表作者本人观点，与本网站无关。本网站对文中陈述、观点判断保持中立，不对所包含内容的准确性、可靠性或完整性提供任何明示或暗示的保证。请读者仅作参考，并请自行承担全部责任。
本学者其他成果
同领域成果
