Pb(Zr0.52Ti0.48)O3 (PZT) films have been fabricated on Pt/Ti/SiO2/Si substrates with a new chemical solutiondeposition technique, in which each layer of PbZrO3 (PZ) and PbTiO3 (PT) was heated to 600℃ as soon as it was spincoated. The fabrication of the homogeneous PZT film was finished through the reaction between the PT and PZ layersand without post-annealing. By surveying the variations of the surface micrographs during the deposition process, anisland-column hybrid growth mode could be concluded. The low-temperature fabrication brings about enhancedfatigue resistance because of the suppression of the formation of the oxygen vacancies. Measurements of theferroelectric properties suggest a promising application for the ferroelectric memory devices.