Theoretical analysis of the double-layer emitter with different doping concentrations for a-Si:H/c-Si heterojunction solar cells
首发时间:2014-04-21
Abstract:A new emitter structure containing two a-Si:H layers with different doping concentrations is designed for the a-Si:H/c-Si heterojunction solar cell. Based on an AFORS-HET simulation it is concluded that an efficiency of 26.0% (AM1.5) can be obtained by means of the new emitter structure. The operation mechanism of this improvement is analyzed. It is found that: 1) the double layer emitter enhances the internal electrical field and the carriers' drift velocity. In turn the quantum efficiency of the devices at short wavelengths and the short circuit current of the solar cells increase. 2) The tunneling probability at the interface of the transparent conductive oxide layer and the emitter is enhanced due to the heavier doped layers of the double-layer emitter. This reduces the series resistances.
keywords: double-layer emitter, a-Si:H/c-Si, drift velocity, tunneling probability
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a-Si:H/c-Si 晶硅异质结太阳电池的高-低掺杂双层发射极结构的模拟研究
摘要:由不同掺杂浓度的双层a-Si:H薄膜构成的新型发射极结构用以改进a-Si:H/c-Si异质结太阳电池的性能。根据AFORS-HET软件模拟优化的结果,这种新的发射极结构可使器件的转换效率达到26.0% (AM1.5)。对其物理机制的分析结果表明:1)上层发射极结构增加了器件的内建电场和载流子的漂移速率,从而提高了太阳电池在短波段的量子效率和短路电流;2)双层发射极中的重掺杂层与透明导电氧化物层接触,使得其界面处的载流子量子隧穿概率增加,从而减少了器件的串联电阻。
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a-Si:H/c-Si 晶硅异质结太阳电池的高-低掺杂双层发射极结构的模拟研究
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