考虑埋氧层电荷时的SOI高压器件纵向耐压模型
首发时间:2004-04-19
摘要:本文建立了具有Si/SiO2界面电荷的SOI高压器件新结构纵向耐压模型,该模型表明,在硅和埋氧层界面上引入界面电荷可以克服常规SOI纵向的固有结构缺陷,充分发挥埋氧层的高击穿电场的特性,得到理想的纵向击穿电压。解析结果、仿真结果、试验结果的一致性验证了模型的正确性。本文的工作对优化设计具有埋氧层界面电荷的SOI新高压器件具有理论指导意义。
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A Vertical Breakdown Model of SOI High Voltage Device with Interface Charges of Buried Oxide
Abstract:A vertical breakdown model of SOI high voltage devices with interface charges between silicon and buried oxide is proposed in the paper. When interface charges are introduced on the surface of buried oxide, the intrinsic drawback of worse sustaining-voltage capability for normal SOI devices is overcome and the ideal breakdown voltage is obtained in the vertical. Analytical results are shown in good agreement with numerical analysis and experimental data.
Keywords: SOI interface charge breakdown voltage model
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No.6114641108233832****
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