直流电沉积CdS纳米线的研究
首发时间:2004-11-26
摘要:在磷酸溶液中,采用二次铝阳极氧化法得到多孔铝阳极氧化膜(AAO)。以AAO为模板,选用直流电沉积方法在孔内组装CdS半导体纳米线, 溶去模板后,获得粗细均一、直径约100 nm 、长度约1.5 mm的纳米线,与AAO模板的孔径一致。该法在制备过程中,无需对AAO模板进行除阻挡层、喷金或预镀金属等处理,而是直接在纳米孔内电沉积CdS,形成CdS半导体纳米线阵列。该法工艺简单,操作方便,容易获得半导体CdS的一维纳米材料。TEM和XRD测试结果表明,CdS纳米线为六方晶型结构。文中还对CdS纳米线的生长机理进行了初步的分析和探讨。
关键词: 直流电沉积 CdS纳米线 AAO模板
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Research of CdS nanowires by dc electrodeposit
Abstract:In this paper, CdS nanowires have been prepared by dc electrodeposition in porous anodic aluminum oxide template, which is produced by dc anodic oxidation in the solution of phosphoric acid. These nanowires have uniform diameters of about 100 nm and lengths up to 1.5 micrometers,after dissolve template. Don’t dissolve the barrier layer and don’t deposite metal film during preparation of AAO, and CdS nanowires have been prepared by dc electrodeposition in holes of AAO template. This preparation is simple and this operation is very easy, therefore acquirability of CdS nanowires become facilitated. TEM and XRD investigations demonstrate that these nanowires have a crystalline structure of hexagonal CdS crystal. Meanwhile a mechanism for the CdS nanocrystallites growth is put forward.
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No.1300138131101431****
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