Dielectric suppression of nanosolid silicon
首发时间:2005-06-23
Abstract:An analytical solution is presented showing that the dielectric susceptibility of a nanosolid depends functionally on the crystal binding that determine the band gap and hence the essential processes of electron polarization, and on the electron–phonon coupling that is often overlooked in theory considerations. The derived solution covers all the measured values of band gap expansion that is beyond the reach of available approaches. Consistency between predictions and impedance measurements evidences the impact of atomic coordination-number imperfection on the dielectric performance of nanometric semiconductors and the validity of the given solution.
keywords: Porous materials semiconductors dielectric bonding nanostructure
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摘要:An analytical solution is presented showing that the dielectric susceptibility of a nanosolid depends functionally on the crystal binding that determine the band gap and hence the essential processes of electron polarization, and on the electron–phonon coupling that is often overlooked in theory considerations. The derived solution covers all the measured values of band gap expansion that is beyond the reach of available approaches. Consistency between predictions and impedance measurements evidences the impact of atomic coordination-number imperfection on the dielectric performance of nanometric semiconductors and the validity of the given solution.
关键词: Porous materials; semiconductors; dielectric; bonding; nanostructure
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No.2262213761119488****
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