DRT MC SOI LIGBT器件新结构的可实现性初探
首发时间:2005-07-25
摘要:本文在介绍了减薄漂移区多沟道SOI LIGBT结构雏形之后,首先初步探讨了这种器件的先进VLSI工艺可实现性;然后比较深入讨论了减薄漂移区的工艺可实现性和与漂移区厚度相关的漂移区新结构可实现性;接着指出了这种器件雏形结构存在的几个主要问题,有针对性的分析了改进措施,并提出了同心圆环源漏互包SOI LIGBT新结构。
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Primary Exploration on Realizability of New Structures of DRT MC SOI LIGBT
Abstract:In this paper the rudimental structure of DRT MC SOI LIGBT is introduced at first. Then its realizability is discussed simply according to the advanced VLSI technologies in our own country. After that, the realizabilities of DRT and new structures related to its thickness are presented in details. Moreover, the troubles and their shootings are pointed out and analyzed respectively. Finally, based on all above a new structural DRT MC SOI LIGBT is put up, which consists of concentric rings with intersurrounded source and drain.
Keywords: SOI LIGBT Drift Region Thinned New Structure Realizability
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No.2528120561122263****
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