Preferential oxidation of diamond {111}
首发时间:2005-07-04
Abstract:Measurements using TGA, SEM, Raman and XRD reveal that diamond oxidizes at ~750 K through oxygen impinging into the densely packed {111} planes throughout the course of reaction. It is also found that diamond graphitizes in vacuum at ~1100 K without orientation preference, being the same as happened under Ar inert gas environment. The intriguing oxidation behavior of diamond indicates that oxidation occurs with selectivity of bonding environment. It is explained that the diamond {111} plane is more favorable than the {220} surface for the oxide tetrahedron formation, and that the oxide bond forming produces loosely bonded dipoles on the surface that are eroded away during the process of oxidation.
keywords: diamond, oxidation, draphitization
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金刚石化学稳定性:{111}面优先氧化
摘要:Measurements using TGA, SEM, Raman and XRD reveal that diamond oxidizes at ~750 K through oxygen impinging into the densely packed {111} planes throughout the course of reaction. It is also found that diamond graphitizes in vacuum at ~1100 K without orientation preference, being the same as happened under Ar inert gas environment. The intriguing oxidation behavior of diamond indicates that oxidation occurs with selectivity of bonding environment. It is explained that the diamond {111} plane is more favorable than the {220} surface for the oxide tetrahedron formation, and that the oxide bond forming produces loosely bonded dipoles on the surface that are eroded away during the process of oxidation.
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No.2352213761120443****
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