半导体ZnO薄膜晶体管
首发时间:2005-12-30
摘要:本文介绍了一种以射频溅射ZnO材料为有源层的薄膜晶体管。在器件有源层制作中通过气氛控制、添加栅网屏蔽等方法改善器件性能。最终晶体管的导通电流达到10-4A量级,整个制作过程处理温度控制在300℃以下,工艺简单且适用于大面积生产。经过初步的分析,可以认为以ZnO材料为有源层的薄膜晶体管,可以满足MIM或MISM型场发射显示阴极的驱动需要。
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ZnO Thin Film Transistors
Abstract:Thin film transistors with rf sputtered ZnO as an active channel layer is introduced in this paper. Device performance is improved by controlling sputtering atmosphere and adding metal grid shielding during the depositing process of semiconductor layer. The ON current is increased to more than 10-4A as a result. The fabrication process is easy to handle with temperature controlled below 250℃ and can be applied to large area devices. Analysis is made on considering the ability of ZnO based thin film transistor to drive MIM or MISM field emission cathode.
Keywords: thin film transistor ZnO rf magnetron sputtering field emission display
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