固结磨料抛光垫作用下的材料去除速率模型
首发时间:2007-04-17
摘要:化学机械抛光CMP已经成为IC制造中的关键工艺之一,相关机制模型的研究是当前CMP的热点。在对研磨抛光过程作出适当简化的基础上,推导出了固结磨料研具研磨抛光工件的去除速率模型,并进行了数值模拟。结果表明:固结磨料研磨加工时的去除率不仅与工件的材质有关,还与固结磨料研磨盘的结构与加工参数相关; 去除速率与相对速度 成正比,与磨粒直径的4次方成反比,随着压力的增大而增大,随着凸起间距的增大而下降。
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A fixed abrasive CMP model of material removal rate
Abstract:Chemical mechanical polishing (CMP) has already become an important process in IC fabrication, and the study on its relevant mechanisms model is the focus of present CMP. A model based on appropriate simplification was developed for describing material removal rate with fixed abrasive pad during wafer polishing, and a numerical simulation of material removal rate was conducted. The results showed that the material removal rate was related to the structure of pad and machining parameters. It was proportional to relative speed and inverse to the fourth power of diameter of the abrasive grits. The dependence of applied pressure was found to be nonlinear. The material removal rate decreased with the increase of the distance between asperities.
Keywords: Fixed abrasive, Polishing, Removal rate, Elastic and plastic deformation
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No.1228311182711768****
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