H+-ISFET的温度特性及补偿
首发时间:2007-07-09
摘要:本文通过研究氢离子敏场效应传感器(H+-ISFET)的物理化学结构特性得到它的温度特性,总结出它极易产生温度漂移的特点。针对这个缺点,提出了五种抑制温度漂移的方法,使得温度补偿后的H+-ISFET有了较好的温度特性。
关键词: 氢离子敏场效应传感器 H+-ISFET 温度特性 温度补偿
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Temperature Characteristics and Compensation Methods of H+-ISFET
Abstract:In this paper , temperature characteristics of pH-ISFET are discussed by the analysis of its structure and working principles. In order to solve the problem of temperature drift , five methods of temperature compensation are mentioned. Thus the temperature characteristics of pH-ISFET are improved.
Keywords: ISFET temperature characteristics, temperature compensation
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No.1394612792711839****
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