离子注入的铝在Si(100)表面的偏析及其引起的纳米团簇和合金晶粒形成现象的实验研究
首发时间:2007-12-27
摘要:通过高温退火注入了铝的Si(100)样品,探讨偏析出来的铝在硅表面的热力学行为。由900 oC的退火实验发现,偏析出来的铝原子一方面形成Si(100)基底的外延铝膜和铝岛,另一方面与硅原子结合形成尺度约为2~3纳米的铝硅团簇。而1200 oC的退火实验显示,铝和硅的快速冷凝形成了立方晶系的Al4Si合金晶粒、尺度约为20~30纳米。细小的铝硅团簇在结构上独立于样品基底并且趋于聚集成团,很可能是在高温退火和快速降温过程中形成铝硅合金晶粒的前驱。
关键词: 硅表面, 掺杂, 铝, 高温退火, 团簇, Al4Si
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Experimental investigation on formation of Al-Si clusters and nanocrystals in the segregation of ion-implanted Al on Si(100)
Abstract:By high-temperature annealing of Si(100) samples containing Al atoms ion-implanted, thermodynamic behaviors of the segregated Al atoms on the surfaces have been investigated. Experiments of annealing the samples at 900 oC show that Al and Si atoms incorporate, giving rise to Al-Si clusters with size of 2-3 nm, while segregated Al atoms form epitaxial Al film and islands on Si(100) surfaces. Further annealing at 1200 oC indicates that rapid cooling of samples leads to formation of cubic Al4Si grains of 20– 30 nm in size. The Al-Si clusters seem to be independent of the substrate structure and tend to get together, which are probably the precursor of the Al-Si alloy formed in the process of the high-temperature annealing and rapid cooling.
Keywords: silicon surface, doping, aluminum, high temperature annealing, clusters, Al4Si
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No.1746118019611987****
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离子注入的铝在Si(100)表面的偏析及其引起的纳米团簇和合金晶粒形成现象的实验研究
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