InGaN薄膜中电子自旋偏振弛豫的时间分辨吸收光谱研究
首发时间:2008-02-26
摘要:采用飞秒时间分辨圆偏振光泵浦-探测光谱对In0.1Ga0.9N薄膜的电子自旋注入和弛豫进行了研究.获得初始自旋偏振度约为0.2,此结果支持在圆偏振光激发下,重、轻空穴带的跃迁强度比为3:1,而不支持1:1或1:0.94的观点.同时获得自旋偏振弛豫时间为490±70 ps,定性分析了自旋驰豫机制,认为BAP机制是电子自旋弛豫的主要机制.
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Study of injection and relaxation of electron spins in InGaN film by time-resolved absorption spectroscopy
Abstract:The injection and relaxation of electron spins in In0.1Ga0.9N film are studied by femtosecond time-resolved circularly polarized pump-probe spectroscopy. An initial degree of spin polarization of 0.2 is obtained, and agrees with 3:1 ration of heavy- to light-hole valence bands in transition strength, but disagrees with the 1:1 or 1;0.94. A spin relaxation lifetime of 490±70 ps is acquired at room temperature. The spin relaxation mechanism is discussed qualitatively, and is thought to be dominated by BAP mechanism here.
Keywords: electron spin, InGaN, spin polarization, spin relaxation
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No.1885420198112040****
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InGaN薄膜中电子自旋偏振弛豫的时间分辨吸收光谱研究
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