Oxygen vacancy induced ferromagnetism in Ni doped ZnO films
首发时间:2008-09-25
Abstract:Zn1-xNixO ( =0.02, 0.03, 0.04, 0.05, 0.07) films were prepared using magnetron sputtering. X-ray diffraction indicates that all samples have a wurtzite structure with c-axis orientation. X-ray photoelectron spectroscopy results reveal that the Ni ion is in a +2 charge state in these films. Magnetization measurements indicate that all samples have room temperature ferromagnetism. In order to elucidate the origin of the ferromagnetism, Zn0.97Ni0.03O films were grown under different atmospheric ratios of argon to oxygen. The results show that as the fraction of oxygen in the atmosphere decreases, both the saturation magnetization and the number of oxygen vacancies increase, confirming that the ferromagnetism is correlated with the oxygen vacancy level.
keywords: ZnO room temperature ferromagnetism Oxygen vacancy Photoluminescence
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No.2435611413212223****
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