掺碳SiGe二极管反向阻断特性模拟与机理分析
首发时间:2008-12-15
摘要:对掺碳SiGe功率二极管的反向阻断特性进行了较深入的研究,给出了详细的机理分析。与同结构SiGe二极管相比,SiGeC二极管的热稳定性显著提高,反向漏电流明显减小,击穿电压也有所增加,而且随着温度的升高SiGeC二极管相对于SiGe二极管的优势更加显著。与少子寿命控制技术相比,该SiGeC/Si异质结二极管有效协调了降低通态电压、减小反向漏电流、缩短反向恢复时间三者之间的矛盾。较好的热稳定性,降低了对器件后续制作工艺的限制,而且它不需要采用寿命控制技术,在制作过程中可以调解Ge、C含量对异质结能带结构进行剪裁,实现对器件性能的折中优化,给器件设计提供了更大的自由度。
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Reverse blocking characteristics simulation and mechanism analysis of SiGe diodes with carbon incorporation
Abstract:The reverse blocking characteristics of SiGe power diodes with carbon incorporation are studied deeply and their mechanisms are also given in detail. Compared to SiGe diodes with the same structures, the thermal stability is improved remarkably, reverse leakage current is reduced largely and breakdown voltage is increased to some extent for SiGeC diodes. The advantages of SiGeC diodes are more obvious at high temperature. Compared to lifetime control technology of minority carrier, the contradictions among decreasing on-state voltage, reducing reverse leakage current and shorting reverse recovery time are coordinated effectively. The high thermal stability of the devices reduces the restrictions on subsequent process and is of benefit to power integration. The device characteristics can be optimized by adjusting Ge and C contents without lifetime control technology, which provides more freedoms for device design.
Keywords: power diodes SiGeC reverse leakage current lifetime control
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No.2658737430712293****
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