反射式变掺杂GaAs光电阴极量子效率模型研究
首发时间:2009-01-06
摘要:借助指数掺杂与均匀掺杂光电阴极的量子效率公式,提出了采用加权平均法表示的反射式变掺杂光电阴极量子效率理论模型。使用该模型对某掺杂结构的反射式GaAs光电阴极量子效率曲线进行了拟合,获得了最佳的拟合效果,且模型的拟合结果能够定量地揭示材料的变掺杂结构,在不同入射光波段对阴极量子效率的贡献不相同这一现象。本文针对此现象进行了深入的分析和探讨。
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Study on the model of quantum efficiency of reflected varied doping GaAs photocathode
Abstract:A reflected varied doping GaAs photocathode quantum efficiency theory model, which adopt add-ratio method by dint of the quantum efficiency theory expression formula of index doping and uniform doping photocathode is proposed. By this model the quantum efficiency curves of a reflected GaAs photocathode under varied doping structure have been fit and obtained the best fit precision, and in different incident photon wavebands, the phenomena that the contribution of doping structures to the cathode quantum efficiency are different was discovered. This phenomena has been analysed and discussed detailedly in the paper.
Keywords: GaAs varied doping photocathode quantum efficiency
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