直流偏压对TiO2/p+-Si异质结中TiO2薄膜的光致发光的影响
首发时间:2009-10-19
摘要:利用直流磁控反应溅射法在重掺硼硅片(p+-Si)衬底上制备了金红石相TiO2薄膜,从而形成TiO2/p+-Si异质结。我们研究了该异质结被施加不同偏压时TiO2薄膜的光致发光的变化情况。结果表明,在正向偏压(p+-Si衬底接正电压)和反向偏压(p+-Si衬底接负电压)下,TiO2薄膜在815nm左右的发光强度均随偏压值的增大而减弱。从上述异质结在不同偏压下的能带图出发,我们给出了金红石相TiO2薄膜在不同偏压下光致发光发生变化的机理。
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Effect of electrical bias on photoluminescence from rutile TiO2 film in TiO2/p+-Si heterostructure
Abstract:TiO2/p+-Si heterostructure was formed by depositing rutile TiO2 film on a heavily boron-doped silicon substrate by DC reactive magnetron sputtering. The evolution of photoluminescence (PL) from the rutile TiO2 film with the electrical bias on the TiO2/p+-Si heterostructure was investigated. It was found that the intensity of PL centered around 815 nm was decreased by increasing either the positive or negative bias voltage. This result has been explained starting from the energy band diagrams of the TiO2/p+-Si heterostructure under different biases.
Keywords: rutile titanium oxide silicon heterostructure photoluminescence
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No.3588429746512559****
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直流偏压对TiO2/p+-Si异质结中TiO2薄膜的光致发光的影响
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