Sb掺杂ZnO薄膜电学、光学性能的研究
首发时间:2009-12-30
摘要:采用氧等离子体辅助脉冲激光沉积(PLD)法,在n-Si (001)衬底上制备出性能良好的Sb掺杂p型ZnO薄膜,其电阻率为44.18 Ω cm,空穴浓度为3.78×1016 cm-3,霍尔迁移率为3.74 cm2V-1s-1,ZnO薄膜在室温下放置九个月,其p型性能基本保持不变。I-V曲线显示良好的整流特性,进一步证明了Sb掺杂ZnO薄膜的p型导电性。低温光致发光(PL)谱测试,确认Sb掺杂p型ZnO薄膜存在两种受主态,其受主能级分别为161和336 meV,分析认为336 meV深受主为Zn空位;161 meV浅受主为由于Sb掺杂产生的SbZn-2VZn缺陷复合体。
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Electrical and optical properties of Sb-doped ZnO thin films
Abstract:Sb-doped ZnO thin films were fabricated on n-Si (001) by oxygen plasma-assisted pulsed laser deposition (PLD). The room temperature electrical properties of the Sb-doped samples show p-type conductivity with a resistivity of 44.18 Ω cm, a Hall mobility of 3.74 cm2V-1s-1, and a carrier concentration of 3.78×1016 cm-3. The p-type behavior shows no significant change after nine months at room temperature. The I-V of heterostructure shows rectification behavior, further demonstrating its p-type conduction. Two acceptor states, with the acceptor levels of 161 and 336 meV, are identified by low-temperature photoluminescence (PL) spectrum. The deep acceptor is Zn vacancy, the shallow one is SbZn-2VZn complex induced by Sb doping. The origin of p-type behavior in Sb-doped ZnO thin films is thought to be the formation of SbZn-2VZn complex.
Keywords: p-type ZnO Sb doping pulsed laser deposition
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