基于SOI技术高压LDMOS击穿电压的研究
首发时间:2011-04-19
摘要:本文基于SOI技术,研究影响高压LDMOS器件击穿电压的主要因素,通过软件模拟和实际工艺制造相结合的方法进行实验,以获得700V以上击穿电压的LDMOS器件。利用软件对以下三种情况进行模拟:硅层和埋氧层厚度的关系对器件击穿电压的影响;无Poly场板和有Poly场板对器件击穿电压的影响;以及漂移区杂质分布情况对器件击穿电压的影响。通过模拟获得700V以上击穿电压的LDMOS器件的相关参数。最后按照软件模拟的结果进行实际工艺制造,并且获得了与软件模拟基本一致的结果。
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Study Of High Voltage LDMOS Base On SOI Technology
Abstract:In this paper, study the impact factor of HV LDMOS break down Voltage base on the SOI technology. Do the experiment by the combination of software simulation and process manufacture. And hope to get the breakdown voltage which is more than 700V. Use the software to simulate according the following three aspects: the impact of the SOI layer thickness and buried oxide thickness on the breakdown voltage, the impact of without or with the Poly field plate on the breakdown voltage, the impact of the impurity distribution in drift region on the breakdown voltage. By software simulation, find the related parameters of the LDMOS device which the breakdown voltage more than 700V. Manufactured the device according to the simulation result, and the experiment result is mostly consistent with the software simulation result.
Keywords: SOI HV LDMOS Breakdown Voltage
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