Zn离子注入单晶Al2O3并退火制备ZnO纳米结构

徐进霞; 张红秀; 肖湘衡; 蔡光旭; 任峰; 蒋昌忠

0
0
浏览
下载

摘要
关键词
基金信息
论文图表
同行评议
相关论文
评论

Fabrication and evolution of nanostructure in Al2O3 single crystals by Zn+ ions implantation and thermal annealing

首发时间：2011-11-16

Xu Jinxia ¹
Xu Jinxia, (1979-),Female,Modification of materials by ion beams.
Zhang Xiuhong ² Xiao Xiangheng ¹
Xiao Xiangheng ,Male,associate professor.
Cai Guangxu ² Ren Feng ³ Jiang Changzhong ⁴

1、Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, WuHan 430072
2、Center for Electron Microscopy and School of Physics and Technology, Wuhan University, Wuhan 430072, P. R. China
3、 Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, P. R. China
4、State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China

Abstract：(0001) α-Al2O3 single crystals (sapphire) were implanted with Zn+ ions at 60 keV to fluences of 1×1017 and 2×1017 ions/cm2，and were then annealed at different temperatures under oxygen ambient. Transmission electron microscopy and optical absorption spectra were used to investigate the formation of nanostructure and their thermal evolution. Our results clearly show that the evolution of ZnO NPs depends strongly on the annealing temperature and time. Zn nanoparticles could be transformed into ZnO while annealing temperature higher than 600 C. ZnO nanoparticles were formed in the Al2O3 when the sample was annealed at 700 C for 1 h. However, while annealing at 700 C for 2 h, ZnO single-crystal film was formed on the surface of Al2O3. Further increasing annealing temperature to 750 C, polycrystalline ZnO nanoclusters were formed on the surface of the sample instead of ZnO film, and leaving nanovoids band in the implanted region for the sample implanted with higher fluence. All the Zn NPs disappeared and transformed to ZnAl2O4 as the annealing temperature increased to 900 C. PL experiment was performed at room temperature to investigate the optical properties and the quality of formed ZnO on the surface of substrate.

keywords： Ion implantation Annealing ZnO Photoluminescence

点击查看论文中文信息

Zn离子注入单晶Al2O3并退火制备ZnO纳米结构

徐进霞 ^{1
2}
Xu Jinxia, (1979-),Female,Modification of materials by ion beams.
张红秀 ³ 肖湘衡 ⁴
Xiao Xiangheng ,Male,associate professor.
蔡光旭 ³ 任峰 ⁵ 蒋昌忠 ⁶

1、武汉大学，人工微结构教育部重点实验室，武汉 430072
2、武汉大学，物理科学与技术学院电子显微镜中心，武汉 430072
3、Center for Electron Microscopy and School of Physics and Technology, Wuhan University, Wuhan 430072, P. R. China
4、Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, WuHan 430072
5、 Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, P. R. China
6、State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China

摘要：将能量为60 keV的Zn+注入到[0001]α-Al2O3 单晶 (蓝宝石)，注入剂量为 1×1017 ions/cm2 和 2×1017 ions/cm2，然后将样品在氧气氛下不同温度退火。用透射电子显微镜和光吸收谱检测样品中纳米结构的形成与演化。结果显示 ZnO 纳米颗粒的演化与退火温度和时间有关。当退火温度高于600 C时，Zn 纳米颗粒转变成ZnO。将其在700 C退火1小时，形成ZnO 纳米颗粒。当退火时间为2小时，在蓝宝石表面形成了ZnO单晶薄膜。将退火温度提高到750 C, 样品表面形成多晶 ZnO 纳米颗粒，并且在样品的注入区形成纳米洞带。当退火温度达到900 C时所有的Zn纳米颗粒转变成了ZnAl2O4。形成的 ZnO纳米结构的发光性质和质量用光致发光谱进行了检测。

关键词：离子注入退火 ZnO 光致发光

基金：

1. National Natural Science Foundation of China （nos. 10905043, 11005082, 91026014, 11175133, 51171132）

论文图表：

引用

导出参考文献

.txt

.ris

.doc

Xu Jinxia,Zhang Xiuhong,Xiao Xiangheng,et al. Fabrication and evolution of nanostructure in Al2O3 single crystals by Zn+ ions implantation and thermal annealing[EB/OL]. Beijing:Sciencepaper Online[2011-11-16]. https://www.paper.edu.cn/releasepaper/content/201111-267.

No.****

同行评议

共计0人参与

全部评论

0/1000

论文编号	201111-267
论文题目	Zn离子注入单晶Al2O3并退火制备ZnO纳米结构
文献类型
收录期刊	上传封面中文期刊英文期刊期刊名称（中文）期刊名称（英文）年，卷（）上传封面中文专著英文专著书名（中文）书名（英文）出版地出版社出版年上传封面中文译著英文译著书名（中文）书名（英文）出版地出版社出版年上传封面中文论文集英文论文集编者.论文集名称（中文） [c]. 出版地出版社出版年， - 编者.论文集名称（英文） [c]. 出版地出版社出版年，- 上传封面中文文献英文文献期刊名称（中文）期刊名称（英文）日期-- 在线地址http:// 上传封面中文文献英文文献文题（中文）文题（英文）出版地出版社,出版日期-- 上传封面中文文献英文文献文题（中文）文题（英文）出版地出版社,出版日期--
英文作者写法：中外文作者均姓前名后，姓大写，名的第一个字母大写，姓全称写出，名可只写第一个字母，其后不加实心圆点“.”, 作者之间用逗号“，”分隔，最后为实心圆点“.”, 示例1：原姓名写法：Albert Einstein,编入参考文献时写法：Einstein A. 示例2：原姓名写法：李时珍；编入参考文献时写法：LI S Z. 示例3：YELLAND R L,JONES S C,EASTON K S,et al.