SOI NMOS器件总剂量效应三维数值模拟
首发时间:2012-01-17
摘要:本文利用TCAD三维仿真工具研究了同时存在电子和空穴陷阱条件下0.5 μm SOI NMOS器件的总剂量效应。研究发现在埋氧中注入电子陷阱可以有效减小器件关态漏电流,并对加入不同电子陷阱浓度的情况做了对比分析。分析结果表明,为获得好的抗辐照性能,所加电子陷阱浓度应大于等于原有空穴陷阱浓度。随着器件尺寸的减小,埋氧层的减薄和顶层硅掺杂浓度的提高,器件的抗辐照性能显著提高。存在STI隔离区的90 nm SOI NMOS器件与不存在隔离区的器件相比,关态漏电流无明显变化,但存在STI隔离区的90 nm SOI NMOS器件阈值电压的漂移现象明显。
关键词: SOI NMOS器件 总剂量效应 电子陷阱 泄漏电流
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Three-dimensional simulation on total ionizing dose ( TID ) effects of SOI NMOSFETs
Abstract:In this paper, the total ionizing dose (TID) effects of 0.5μm Silicon-On-Insulator (SOI) NMOS devices with electron and hole traps are analyzed by TCAD (technology computer aided design) three-dimensional simulation. It is found that injection of the electron traps in the buried oxide can reduce the off-state leakage current. The injection of electron traps with different concentrations is compared, the results show concentration of electron traps should be equal to or greater than that of hole traps for a good performance of anti-radiation. As the device size decreases, performance of anti-radiation can be significantly improved for thin buried oxide and high doping concentration of top silicon layer. Compared the device without isolation region, 90nm SOI NMOS devices with shallow-trench isolation (STI) region shows no obvious change of off-state leakage current. However, 90nm SOI NMOS devices with STI region shows significant threshold voltage shift.
Keywords: SOI NMOSFET TID effects electron trap leakage current
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