130nm体硅SRAM和SOI SRAM器件单粒子翻转3D模拟与分析
首发时间:2012-01-31
摘要:用半导体数值模拟软件Sentaurus TCAD构建了特征尺寸为130nm的体硅SRAM(Static Radom Access Memory)器件和SOI SRAM(Silicon On Insulator SRAM)器件的3D模型,对这两种SRAM器件的单粒子翻转LET阈值进行了数值模拟。结果表明,SOI SRAM器件单粒子翻转LET阈值约为3.67MeVocm^2/mg,比体硅SRAM器件重离子单粒子翻转LET阈值2.17 MeVocm^2/mg高,说明在特征尺寸为130nm尺度下,SOI SRAM器件抗单粒子翻转性能比体硅SRAM器件好;在这两种SRAM器件发生单粒子翻转的LET阈值附近,瞬态脉冲电流尾部均出现了异常增大现象,对其机理进行了分析。
关键词: SRAM 体硅技术 SOI技术 单粒子翻转 LET阈值
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3D Simulations of Single Event Effects in 130nm Bulk and SOI SRAM
Abstract: 3D simulations of Single Event Upset(SEU)in 130nm bulk and SOI SRAM were performed with Sentaurus TCAD. The SEU LET thresholds of these two SRAMs were obtained. The LET threshold of SEU of SOI SRAM is about 3.67MeVocm^2/mg, higher than that of bulk SRAM, 2.17MeVocm^2/mg, indicating the SOI SRAM is better than bulk SRAM against SEU. Abnormal increases at the end of the transient current induced by heavy ion were observed when the LETs of incident ions were close to the SEU LET thresholds. The mechanism was proposed and analyzed.
Keywords: SRAM Bulk Silicon Technology SOI Technology SEU LET Threshold
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