Transmission-grating-photomasked transient spin grating and its application to measurement of electron-spin ambipolar diffusion in (110) GaAs quantum wells
首发时间:2012-03-29
Abstract:A circular dichromatic transient absorption difference spectroscopy of transmission-grating-photomasked transient spin grating is developed and formularized. It is very simple in experimental setup and operation, and has high detection sensitivity. It is applied to measure spin diffusion dynamics and excited electron density dependence of spin ambipolar diffusion coefficient in (110) GaAs quantum wells. It is found that the spin ambipolar diffusion coefficient of (110) and (001) GaAs quantum wells is close to each other, but has an opposite dependence tendency on excited electron density. This spectroscopy is expected to have extensive applicability in the measurement of spin transport.
keywords: Spin transport Transient spin grating Absorption spectroscopy (110) GaAs quantum wells
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Transmission-grating-photomasked transient spin grating and its application to measurement of electron-spin ambipolar diffusion in (110) GaAs quantum wells
摘要:A circular dichromatic transient absorption difference spectroscopy of transmission-grating-photomasked transient spin grating is developed and formularized. It is very simple in experimental setup and operation, and has high detection sensitivity. It is applied to measure spin diffusion dynamics and excited electron density dependence of spin ambipolar diffusion coefficient in (110) GaAs quantum wells. It is found that the spin ambipolar diffusion coefficient of (110) and (001) GaAs quantum wells is close to each other, but has an opposite dependence tendency on excited electron density. This spectroscopy is expected to have extensive applicability in the measurement of spin transport.
关键词: Spin transport; Transient spin grating; Absorption spectroscopy; (110) GaAs quantum wells
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Transmission-grating-photomasked transient spin grating and its application to measurement of electron-spin ambipolar diffusion in (110) GaAs quantum wells
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