Influence of neutron irradiation on persistent photonconductivity in GaN
首发时间:2012-11-21
Abstract:Unintentionally doped GaN films grown by MOCVD were irradiated with neutron at room temperature. In order to investigate the influence of neutron irradiation, persistent photoconductivity (PPC) and low temperature photoluminescence (PL) measurements were carried out. Pronounced PPC is observed, and yellow luminescence (YL) band is not be detected by PL measurement at 5K, suggesting that PPC and YL are not related. Moreover, PPC phenomena has been enhanced by neutron irradiation and quenched by the followed annealing process at 900 C. The possible origin of PPC in GaN is discussed.
keywords: Microelectronics and solid-state electronics GaN persistent photoconductivity
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中子辐照对GaN中持续光电导现象的影响
摘要:本文通过测试中子辐照非故意掺杂GaN的光谱特征,研究中子辐照对持续光电导现象的影响。研究发现:在中子辐照前后样品中都观察到了明显的持续光电导,中子辐照会进一步增强持续光电导,随后的高温退火则使其变弱,对出现这一现象的原因进行深入的讨论。此外,无论中子辐照前后,在样品低温光致发光谱中均未出现黄光带,说明持续光电导与黄光带的起源之间没有必然的联系。
关键词: 微电子学与固体电子学 GaN 持续光电导
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