Photoluminescence from hydrosilylated silicon nanocrystals
首发时间:2012-12-24
Abstract:The surface of hydrogen-passivated silicon nanocrystals (Si NCs) is modified via a styrene-based hydrosilylation scheme. It is found that the peak position of the photoluminescence (PL) from hydrosilylated Si NCs is hardly affected by hydrosilylation time. However, the quantum yield (QY) of the PL from hydosilylated Si NCs decreases with the increase of hydrosilylation time. During the storage of hydrosilylated Si NCs in air the PL from hydrosilylated Si NCs blueshifts, while the PL QY for hydosilylated Si NCs initially increases and then decreases. The underlying mechanisms for all the optical behavior of hydrosilylated Si NCs are discussed.
keywords: Silicon nanocrystals Surface Hydrosilylation Luminescence Quantum yield
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氢化硅烷化的硅纳米晶体的光致发光
摘要:表面氢钝化的硅纳米颗粒通过基于苯乙烯的氢化硅烷化成功改性。本文研究发现,改性时间对改性后硅纳米颗粒的光致发光峰位置有非常重大的影响。随着改性时间的延长,纳米硅颗粒光致发光的量子效率降低。随着在空气中的放置时间增长,改性后的纳米硅颗粒光致发光峰峰位蓝移,而量子效率呈现先增加后减小的趋势。随后,本文对纳米硅颗粒的这些光学现象机制进行了讨论。
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