Performance Improvement of Oxide Thin-Film Transistors by a Two-Step-Annealing Method
首发时间:2013-02-13
Abstract:In this paper, thin-film transistor (TFT) with indium zinc oxide (IZO) channel layer was fabricated using a two-step-annealing method. The device showed better uniformity and better stability under positive bias stress, negative bias illumination stress, and temperature stress, compared to those with only one annealing step. The falling rate of this device was as high as 0.593 eV/V, showing that trap states in the channel were greatly reduced by the two-step-annealing process.
keywords: oxide semiconductor thin-film transistor indium zinc oxide
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两步退火方法对氧化物薄膜晶体管性能的改善作用
摘要:本文使用两步退火的方法制备了基于氧化铟锌半导体的薄膜晶体管。与普通的只有单步退火方法制备的相比,这种薄膜晶体管具有更好的均匀性,并且在正栅压应力、负栅压光照应力以及温度应力下都显示出较好的稳定性。研究发现,这种薄膜晶体管的费米能级降落速率高达0.593 eV/V,意味着通过两步退火的方法能够大幅降低沟道的缺陷态密度。
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