Low-roughness and easily-etched transparent conducting oxides with a stack structure of ITO and IZO
首发时间:2013-04-03
Abstract:Indium tin Oxide (ITO) thin film is hard to be etched in wet etchants because of the crystalline state. To obtain easily-etched transparent conductor oxide (TCO), a layer of ultra-thin indium-zinc oxide (IZO) was inserted between ITO films. It was found that the as-deposition TCO film with IZO insertion layers was amorphous and easily-etched by oxalic. Furthermore, the surface roughness of this multilayer TCO film was only 0.52 nm, much lower than that of the ITO monolayer film with the same thickness. After annealing at 250 degree in air, a low sheet resistance of ~10 Ω/□ and a reasonably transmittance of ~85% in visible range film were obtained.
keywords: transparent conducting oxide ITO-IZO multilayer film easily-etched
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具有ITO和IZO叠层结构的低粗糙度和易刻蚀的透明导电氧化物
摘要:ITO薄膜因为易结晶而难以被刻蚀。为了获得易刻蚀的透明导电薄膜,使用一层极薄的IZO薄膜插入ITO薄膜之间。实验表明这种复合薄膜是非晶态的,它在草酸溶液中就能被刻蚀,而且这种薄膜的表面粗糙度只有0.52nm,远小于同样厚度的单层IZO薄膜。经过250度退火后,这种复合薄膜显示出低方块电阻(~10 Ω/□)和良好的可见光透过性(~85%)。
关键词: 透明导电氧化物 ITO-IZO多层复合薄膜 易刻蚀
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