直流脉冲等离子体CVD制备碳氮薄膜的Ar离子原位应力抑制
首发时间:2013-11-22
摘要:研究了不同Ar气流量下制备的含氢碳氮膜的结构和机械性能,并探讨了不同Ar气流量下对微结构和和相应机械性能的影响关系。实验发现,相对于无Ar气辅助和低Ar气流量辅助沉积的样品,在Ar气流量5 sccm沉积的样品表现出明显的压应力降低、高的硬度高和低的表面均方根粗糙度。当Ar气流量进一步增加时,样品表现出很小的压应力,同时样品的机械性能没有明显的降低。结构分析表明沉积薄膜时Ar气的引入起到了与衬底加热同样的效果,导致氮原子进入芳香碳环,在Ar离子的辅助轰击下容易导致五元碳环的形成,形成了fullerene-like碳氮结构,使薄膜在释放应力的同时具有良好的机械性能。
For information in English, please click here
In situ stress suppression of hydrogenated carbon nitride film prepared by dc pulse plasma CVD with Ar introduction
Abstract:The evolution of hydrogenated amorphous carbon nitride films was investigated with an introduction of Ar in deposition. The results showed that the films deposited at Ar flow rate 5sccm exhibit lower compressive stress, higher hardness and lower RMS roughness than the films deposited without Ar and at lower Ar introduction. Structural analysis showed the film with relatively high sp2 and nitrogen content possess higher hardness, low compressive stress and lower RMS roughness. It was attributed to the easily formed curved graphite microstructure when an introduction of Ar in deposition.
Keywords: amorphous carbon film fullerene-like mechanical property
论文图表:
引用
No.****
同行评议
共计0人参与
勘误表
直流脉冲等离子体CVD制备碳氮薄膜的Ar离子原位应力抑制
评论
全部评论0/1000