线性能量传输值对SOI NMOS寄生双极放大效应的影响
首发时间:2013-12-23
摘要:本文通过ISE-TCAD二维模拟软件,研究了全耗尽和部分耗尽SOI NMOS器件的单粒子效应。主要分析了不同线性能量传输值LET对寄生双极放大增益的影响。论文的研究结果表明,相同条件下,PDSOI的漏极电流和收集电荷都比FDSOI的值大。LET值越高,漏极电流越大,收集电荷越大。
For information in English, please click here
Influence of linear energy transfer on the parasitic bipolar amplification effect of SOI NMOSFET
Abstract:In the paper, the SEE for partially depleted and fully depleted SOI NMOSFET is simulated using the two-dimensional simulator ISE-TCAD. We mainly investigate the influence of different LET on the parasitic bipolar amplication gain of SOI NMOSFET. The research results show that the drain current and collection charge of PDSOI under the same conditions are more than the values of FDSOI. The drain current and the collected charges increase with increasing LET.
Keywords: Parasitic bipolar amplification effect linear energy transfer (LET) drain collection charges
基金:
论文图表:
引用
No.****
同行评议
共计0人参与
勘误表
线性能量传输值对SOI NMOS寄生双极放大效应的影响
评论
全部评论0/1000