The electrical characteristics of GaAs-MgO interfaces of GaAs MIS Schottky diodes
首发时间:2014-08-04
Abstract:Many researches pay attention to the metal-semiconductor interface barrier height, due to its effect on device. Deliberate growing an interface layer to affect and improve the quality of device, especially metal-insulator-semiconductor (MIS) structures, arouse wide attention. In this paper, Be-doped GaAs was grown on substrate wafer by MBE on purpose before depositing insulator layer, and then MgO film as the dielectric interface layer of Au/GaAs were deposited using Atomic Layer Deposition (ALD) method. The interface electrical characteristics of the metal-insulator-semiconductor (MIS) structures were investigated in detail. The barrier height and ideal factor of GaAs diode parameters were calculated by means of current-woltage(I-V) characteristics. Experimental result shown that along with the increasing of the doping content, the Schottky barrier height increasing, but the ideal factor decrease at first and then increase.
keywords: Be-doped GaAs GaAs MIS I-V Schottky barrier height ideal factor
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GaAs MIS肖特基结的GaAs-MgO界面层的电学性质的研究
摘要:在金属与半导体接触的研究中,许多研究致力于关注其界面势垒高度,这是因为其对器件性能的影响。故意在金属与半导体之间生长一层界面层可以改善器件的性质,尤其引人注目的是生长金属-绝缘层-半导体(MIS)结构。在这篇文章中,使用分子束外延技术(MBE)生长的Be掺杂的GaAs样品。在金属Au与半导体GaAs中故意用原子层沉积技术(ALD)插入一层MgO绝缘层。根据电流-电压(I-V)特性曲线研究不同掺杂浓度的GaAs对势垒高度和影响因子的影响。实验结果表明,Au/MgO/GaAs结的肖特基势垒随着掺杂浓度的升高而升高,影响因子先降低后增加。
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No.4604839992039140****
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