利用X射线光电子能谱对铁掺杂碳膜的阻变机理研究
首发时间:2016-11-25
摘要:本文在以磁控溅射方法制备的铁掺杂碳膜中观察到了可重复的,稳定性高的阻变效应,该薄膜被用于制备Pt/Al/Fe-C/Au/Ti结构的非易失性存储单元。利用XPS对不同膜层厚度中各种元素进行分析,结果显示,同一阻变单元高阻态和低阻态相比,氧离子在电场的作用下来回迁移导致了高低阻态的转换。
For information in English, please click here
Resistive switching machanism of Fe doped carbon films studied by X-ray photoelectron spectroscopy
Abstract:In this paper, reproducible and reliable resistive switching is observed in Fe-C thin films which prapared by DC magnetron sputtering. And these films were used to fabricated nonvolatility Pt/Al/Fe-C/Au/ Ti structure cells.To analysis the elements in defferent depth though X-ray photoelectron spectroscopy-XPS, results indicate that in the same memory cell, the migration of oxygen ion caused the resistive switching of cells.
Keywords: materials science Fe-C thin films resistive switching effect XPS
论文图表:
引用
No.4710462117023514****
同行评议
共计0人参与
勘误表
利用X射线光电子能谱对铁掺杂碳膜的阻变机理研究
评论
全部评论0/1000