光电化学制备相干多孔硅等径控制技术研究
首发时间:2016-12-16
摘要:相干多孔硅(Coherent Porous Silicon, CPS)是通道尺寸在微米量级且大小均匀,空间规则排列的多孔硅阵列,其具有高长径比,大孔隙率等优点,被广泛应用在硅微通道板、MEMS器件、微型散热器件等领域。本文针对光辅助电化学腐蚀制备相干多孔硅过程中的通道尺寸展开研究,首先探究了通道尺寸与腐蚀电流之间的关系,然后在研究电解液的扩散限制和暗电流的影响的基础上,根据实验数据对腐蚀电流控制进行修正,最后通过控制光源实现相干多孔硅阵列的均匀生长。
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Preparation of Coherent Porous Silicon with Uniform Pore Size by Photo - assisted Electrochemical Method
Abstract:Coherent Porous Silicon (CPS) is a porous silicon array with uniform pore size and uniform size and spatial regularity. It has the advantages of high aspect ratio and large porosity. It is widely used in silicon microchannel plate , MEMS devices, micro-cooling devices and other fields. In this paper, the aperture size of coherent porous silicon in photo-assisted electrochemical etching is studied. Firstly,the relationship between channel size and corrosion current is investigated. Then, based on the diffusion limitation and the influence of dark current, The experimental data are used to modify the corrosion current control. Finally, the coherent porous silicon arrays are uniformly grown by controlling the light source.
Keywords: Photoelectrochemistry Coherent Porous Silicon Channel size
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