AZO薄膜电阻特性研究
首发时间:2016-12-05
摘要:采用原子层沉积(Atomic Layer Deposition,ALD)技术制备AZO薄膜。本文主要研究了ZnO循环百分比和退火时间对AZO薄膜电阻的影响,以及不同组分比例AZO薄膜的Zn含量。研究结果表明,ZnO循环百分比在20%-70%范围内AZO薄膜电阻可在3个数量级内调节,当ZnO循环百分比>70%时,AZO薄膜电阻数量级变化较大,在7个数量级内。随着退火时间的增加AZO薄膜电阻线性特征增强,退火时间为6h时,薄膜电阻的偏差为2.71%。用修正后的Zn含量公式所算出的Zn含量接近实际测量的Zn含量。
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Resistance property of AZO thin film
Abstract:IThe AZO thin films were prepared by atomic layer deposition (ALD) technique. The effects of ZnO cycle percentage and annealing time on the AZO thin films were investigated, and the Zn content of AZO thin films with different composition ratios was investigated. The results show that the AZO thin film sheet resistance can be adjusted within three orders of magnitude when the percentage of ZnO cycles is 20%-70%. When the percentage of ZnO cycles is more than 70%, the order of the sheet resistance of AZO film varies within 7 orders of magnitude. With the increase of annealing time, the linearity of AZO thin film sheet resistance was enhanced. When the annealing time was 6h, the deviation of sheet resistance was 2.71%. The Zn content calculated from the modified Zn content formula is close to the actually Zn content.
Keywords: AZO thin film Annealing Sheet resistance Zn content
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