一种基于在p型氮化镓薄膜上原位生长n型氮化镓纳米线阵列构成的新颖紫外探测器

王志成; 伍绍腾; 汪炼成; 王成民; 张辉; 熊德平; 朱凝; 刘志强; 伊晓燕; 王军喜; 李晋闵; 何苗

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Novel UV photodetector based on in-situ grown n-GaN nanowires array/p-GaNhomojunction

首发时间：2017-05-17

Zhicheng Wang ¹
Zhicheng Wang was born in 1991, male, a graduate student, his major is Microelectronics and solid-state electronics.
Shaoteng Wu ² Liancheng wang ² Chengmin Wang ³ Hui Zhang ³ Deping Xiong ³ Ning Zhu ¹ Zhiqiang Liu ²
Liu zhiqiang, male, Ph.D., associate professor, master tutor. In 2004 ,he got a master's degree in jilin university, in 2007 he got a doctor’s degree of microelectronics and solid-state electronics in the Chinese academy of sciences semiconductor. Then he work at the Chinese academy of sciences semiconductor after graduation. Department of physics of nanjing university postdoctoral between 2009 and 2011, 2011-2012, the United States, north Carolina state university, he as a visiting scholar, 2012 up to now, he work in semiconductor institute of Chinese academy of sciences.
Xiaoyan Yi ²
Yi xiaoyan, female, Ph.D. professor, Doctoral tutor.In 2006, she received a doctor's degree of microelectronics and solid-state electronics in semiconductor research institute of Chinese academy of sciences. Then she work in the semiconductor process line and is responsible for the high power LED devices and new device technology development. She joined semiconductor lighting research and development center of Chinese academy of sciences in 2007, as the center's chief engineer, she mainly engaged in the study of new type structure of high-power LED, mainly including gallium nitride based light emitting diode device physics research and structure design, the vertical structure of LED research, zinc oxide, such as graphene new transparent electrode materials research, etc.
Junxi Wang ² Jinmin Li ² Miao He ³
M. He received the B.S.degree in physics from Jilin University, China in 1987, the M.S.degree in Solid Physics from the Institute of Physics, Chinese Academy of Science in 1990, and the Ph.D. degree in Optoelectronic Engineering from Huazhong University of Science and Technology, Wuhan, China in 2000. Now He is currently with Guangdong University of Technology, engaging in research of semiconductor optoelectronics as a Professor.

1、Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, P. R. China
2、Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083, P. R. China
3、School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, P. R. China

Abstract：We successfully demonstrated a novel gallium nitride (GaN) nanowire (NW)/p-GaNhomojunction UV photodetector via in-situ grown vertical well-aligned (GaN) nanowires grown on p-GaN/sapphire by vapor-liquid-solid (VLS) process. The length of GaN nanowires was in the range of 2-3μm and the diameter was in the range 200-300 nm. The current-voltage curve of the homojunction demonstrates obvious rectifying diode behavior in a dark environment. Under UV light (365nm,mercury lamp), the current was almost 6 times larger than that in dark current at -1 V. Continuous measurements indicate the reproducibility and stability of this homojunctionphotodetector.

keywords： GaN nanowires photodetector VLS

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一种基于在p型氮化镓薄膜上原位生长n型氮化镓纳米线阵列构成的新颖紫外探测器

王志成 ¹
Zhicheng Wang was born in 1991, male, a graduate student, his major is Microelectronics and solid-state electronics.
伍绍腾 ² 汪炼成 ² 王成民 ³ 张辉 ³ 熊德平 ³ 朱凝 ¹ 刘志强 ²
Liu zhiqiang, male, Ph.D., associate professor, master tutor. In 2004 ,he got a master's degree in jilin university, in 2007 he got a doctor’s degree of microelectronics and solid-state electronics in the Chinese academy of sciences semiconductor. Then he work at the Chinese academy of sciences semiconductor after graduation. Department of physics of nanjing university postdoctoral between 2009 and 2011, 2011-2012, the United States, north Carolina state university, he as a visiting scholar, 2012 up to now, he work in semiconductor institute of Chinese academy of sciences.
伊晓燕 ²
Yi xiaoyan, female, Ph.D. professor, Doctoral tutor.In 2006, she received a doctor's degree of microelectronics and solid-state electronics in semiconductor research institute of Chinese academy of sciences. Then she work in the semiconductor process line and is responsible for the high power LED devices and new device technology development. She joined semiconductor lighting research and development center of Chinese academy of sciences in 2007, as the center's chief engineer, she mainly engaged in the study of new type structure of high-power LED, mainly including gallium nitride based light emitting diode device physics research and structure design, the vertical structure of LED research, zinc oxide, such as graphene new transparent electrode materials research, etc.
王军喜 ² 李晋闵 ² 何苗 ³
M. He received the B.S.degree in physics from Jilin University, China in 1987, the M.S.degree in Solid Physics from the Institute of Physics, Chinese Academy of Science in 1990, and the Ph.D. degree in Optoelectronic Engineering from Huazhong University of Science and Technology, Wuhan, China in 2000. Now He is currently with Guangdong University of Technology, engaging in research of semiconductor optoelectronics as a Professor.

1、纳米功能材料与器件实验室，光电子材料与技术研究所，华南师范大学，广州 510631 中国
2、半导体研究所，中国科学院，北京 100083 中国
3、物理与光电工程学院，广东工业大学，广州 510006，中国

摘要：首先通过在蓝宝石/p型氮化镓薄膜衬底上利用气液固生长方法生长得到垂直于衬底的氮化镓纳米线，然后将其制作成一种由氮化镓纳米线和氮化镓薄膜构成同质pn结的新颖的紫外光电探测器。氮化镓纳米线的长度均在2-3微米、纳米线的直径在200-300纳米。在黑暗环境下测得同质pn结的电流-电压曲线具有很好的整流特性。在主波长为365纳米的汞灯照射下，在偏置电压为-1V时，光电流约为暗电流的6倍。后续的测试也进一步验证了同质pn结紫外探测器的可重复性和稳定性。

关键词：氮化镓纳米线光电探测器气液固生长

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Zhicheng Wang,Shaoteng Wu,Liancheng wang,et al. Novel UV photodetector based on in-situ grown n-GaN nanowires array/p-GaNhomojunction[EB/OL]. Beijing:Sciencepaper Online[2017-05-17]. https://www.paper.edu.cn/releasepaper/content/201705-1116.

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论文编号	201705-1116
论文题目	一种基于在p型氮化镓薄膜上原位生长n型氮化镓纳米线阵列构成的新颖紫外探测器
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