GaAs器件质子辐照效应模拟研究
首发时间:2017-05-05
摘要:本文利用Geant4软件模拟了质子入射GaAs MOSFET器件中产生的位移损伤效应,结果显示能量越高核反应过程越复杂,产生的PKA种类也越多,低能量质子入射GaAs器件中产生的NIEL值较大,可见低能质子在GaAs器件中产生的辐照损伤程度高于高能质子,更容易引起器件电学性能退化。
关键词: 关位移损伤 质子辐射 Geant4 GaAs MOSFET。
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Simulation Study of Proton Irradiation Effect in GaAs Devices
Abstract:In this paper the displacement damage effect computation aproach in GaAs MOSFET are presented by using Geant4 code. the results shows The simulating result shows that the complexity of the nuclear reaction process and the PKAs species induced by nuclear raction will increase with the increase of incident proton energy. The NIEL value induced by low energy proton is higher than the high energy proton, so displcement damage induced by proton in GaAs device was more serious in low energy range, and the low energy proton are more easily to cause electrical performance degradation in GaAs device.
Keywords: Displacement damage Proton radiation Geant4 GaAs MOSFET.
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No.4727264991511492****
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