光电互连器件实现中GaAs蚀刻的精确控制技术
首发时间:2017-05-05
摘要:在本文中,一种在电感耦合等离子体(ICP)蚀刻系统中使用氯气/氩气/氧气蚀刻气体精确控制GaAs蚀刻速率的全新蚀刻技术被提出。实验表明,氧气的引入可以使得GaAs蚀刻速率小于1埃每秒(A/s),并且相关实验结果还显示GaAs的蚀刻速率受到蚀刻尺寸的影响,而GaAs材料的表面粗糙度不会受到蚀刻影响。这一刻蚀技术将有利于将工艺图形精确转移到半导体材料上,可以应用于半导体光电子互连器件的实现。文中实现了将光刻胶掩膜图形向LED的转移,并测量了相关器件的性能。
关键词: 半导体技术 GaAs 电感耦合等离子体刻蚀(ICP) 发光二极管(LED) 图形转印
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Precise control of GaAs etching for interconnect optoelectronic devices
Abstract:In this paper, a new etching technology for precisely controlling the GaAs etching rate with a Cl2/Ar/O2 chemistry in inductively coupled plasma (ICP) etching system was proposed. With the introduction of O2, a GaAs etching rate of less than 1 angstrom per second could be obtained. Moreover, the GaAs etching rate will be etching aperture size related and the etched GaAs surface roughness would be almost not affected by the etching. It will be good for the pattern transfer from organic mask to the semiconductor materials for optoelectronic and electronic interconnect devices. A pattern transferring from photoresist mask to a LED was realized and the LED's performance was measured after.
Keywords: Semiconductor technology GaAs Inductively Coupled Plasma etching LED pattern transfer
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No.4729062119653714****
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