单片三维集成中的关键工艺和器件技术
首发时间:2017-05-11
摘要:三维单片集成的发展动力来自对高集成度、低成本、多功能系统的需求。器件选择上,栅控能力强、泄漏电流低的超薄体全耗尽器件(如UTBB、FinFET、NWFET)适用于单片三维集成。工艺控制上,其核心问题在于控制全过程的热预算,关键工艺是上层器件有源区的形成技术。应用领域与发展方向上,有源层转移键合技术和再结晶技术分别适应于more Moore和more than Moore的发展方向。
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Key Process and Device Technology in Monolithic 3D IC
Abstract:The motivation of monolithic 3D IC comes from the market demand of systems with high integration level, low cost and multifuction. The device types that can be used in monolithic 3D IC are ultra-thin body devices such as UTBB, FinFET and NWFET which have a strong gate controllability and low off-leakage. The main question in manufacture is how to control thermal budget in the whole process. The key process module is the formation of the top active layer including seed window epitaxy, recrystallization and CoolCubeTM, in which the last two are suitable for more Moore and more than Moore, respectively.
Keywords: microelectronics monolithic 3D IC thermal budget control ultra-thin body device
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