The modeling of high temperature electric device based on wide bandgap semiconductor GaN

• 1、College of information science and engineering，Northeastern University，Shenyang，110819

Abstract：In many occasions, such as aerospace, oil drilling, thermal power, nuclear power and other industries require sensing system working in high temperature environments, compared with the first generation of semiconductor such as silicon, germanium and the second generation of semiconductor gallium arsenide, gallium nitride (GaN) is the representative third generation of semiconductor which has greater band gap, better high-temperature performance. GaN that broaden the application field of high temperature electronics has become a hot research of semiconductor devices. The research from the perspective of establishing a high temperature device model, through GaN high electron mobility transistor builds a test system for full temperature. The electrical characteristics of GaN electronic devices is tested in temperature area from 25℃(normal temperature) to 300℃ambient temperature wide range. Output characteristics, transfer characteristics and self heating effect of device are further researched in different temperature. Through the data fitting method, the DC model is improved. The model parameters are extracted from each temperature sampling point and the function relation between the parameters and the temperature is obtained. Accordingly, the correct device model is obtained at full temperature, Correct model for subsequent high temperature circuit simulation design can effectively reduce the waste of the device, shorten the design period of the high temperature electronic circuit and improve the success rate of the circuit.

Keywords： GaN device modeling data fitting