MBE生长Be掺杂GaAs光学特性及硫钝化处理研究
首发时间:2017-08-02
摘要:采用分子MBE生长Be掺杂GaAs光学特性及硫钝化处理研究束外延(MBE)技术在半绝缘GaAs衬底上外延获得表面形貌均匀,晶体质量较好,掺杂浓度较高的Be掺杂P型GaAs薄膜材料,并用该Be掺杂GaAs研究硫钝化对材料光致发光强度的影响。利用浓度8%的(NH4)2S溶液与去离子水和异丙醇以体积比为1:10的比例分别配制钝化液对Be掺杂GaAs材料进行硫钝化处理实验,钝化处理后对样品进行了光致发光(PL)谱测试,研究钝化后Be掺杂GaAs材料的光致发光特性。PL光谱结果表明,钝化处理的Be掺杂GaAs光致发光强度均增强,且在本实验中用异丙醇作溶剂配制的钝化液所处理样品的光致发光强度增强效果最好。
For information in English, please click here
Optical properties and sulfur passivation research of Be doped GaAs grown by MBE
Abstract:P-type GaAs film with uniform surface morphology, better crystal quality and higher carrier concentration has grown by molecular beam epitaxy techniques use Be as dopant source, and it was used to investigated the effect of sulfur passivation on the luminescence intensity. The sulfur passivation experiment for Be-doped GaAs was conducted with the sulfur passivation solution prepared by 8% (NH4)2S solution with deionized water and isopropanol in a volume ratio of 1:10 respectively. After sulfur passivation experiment the photoluminescence spectrum was measured to investigate the photoluminescence properties for the Be doped GaAs. The PL spectrum show that the PL intensity of the both samples were enhanced, in addition, in our experiment the PL intensity for the sample treated by 8% (NH4)2S solution with isopropanol as solvent was enhanced the most.
Keywords: GaAs Be-doped MBE sulfur passivation PL
基金:
论文图表:
引用
No.4739585992119150****
同行评议
共计0人参与
勘误表
MBE生长Be掺杂GaAs光学特性及硫钝化处理研究
评论
全部评论0/1000