PECVD薄膜颗粒缺陷研究和改善
首发时间:2017-09-07
摘要:在半导体集成电路制造PECVD工艺中,经常会遇到薄膜颗粒缺陷问题。本论文总结了PECVD 中薄膜颗粒的类型和形成原因以及改善方法。PECVD工艺中的薄膜颗粒缺陷分类主要分为掉落颗粒(fall on particle)缺陷 和成膜颗粒(in-film particle)缺陷。 造成fall on particle缺陷的原因主要是机械传送过程中的刮擦或PECVD化学反应腔不清洁。 In-film particle缺陷的的主要原因是PECVD化学反应腔或气体管路腔密封不严导致外界氧气混入,化学反应提前发生所造成。针对fall on particle缺陷, 改善的方法是PECVD机台定期预防保养,传送机械手位置校准和易损部件更换,而对于in-film particle defect, 必须保证PECVD化学反应腔和气体管路密封性良好。
关键词: 薄膜 等离子体增强化学气相淀积 颗粒缺陷
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PECVD particle defect research and improvement
Abstract:In PECVD process of semicondutor integrated circuit manufacturing, it often encounted particle defect issues. The type and root cause and improvement of particle defect have been summarized in this paper. There are two types of particle defect, one is fall on particle defect, the other is in-film partciel defect. The root cause of fall on particle defect is mostly scratch during wafer transfer or process chamber not clean enough. The root cause of in-film particle defect is mostly process chamber leak or process gas line leak which induces chemical reaction prior to plasma turn on. The fall on particle defect can be improved by preventive maintenace such as hand-off position calibration and replace the consumable parts. The in-film particle defect can improved by keeping good sealing about process chamber and process gas line.
Keywords: Thin film PECVD Particle defect
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No.4740925121063215****
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