膜厚对ITO薄膜的表面等离子体共振波长的影响
首发时间:2017-10-18
摘要:本文采用直流磁控溅射的方式在浮法玻璃衬底上制备了立方多晶铁锰矿结构的ITO薄膜。为了实现ITO薄膜表面等离子体共振(SPR)波长的可控调节,通过改变薄膜沉积时间,制备出不同厚度的ITO薄膜。随着膜厚由16nm逐渐增加到271nm,其结晶程度得到增强,对应的载流子浓度由4.79*10^20cm^-3增大到2.41*10^21cm^-3,SPR波长由1802nm逐渐蓝移到1204nm,实现了近红外区域SPR波长的可控调节。采用Drude自由电子气模型对不同厚度ITO薄膜的介电常数实部交叉波长进行了理论计算,进一步证明SPR波长的有效调节取决于膜厚对载流子浓度的影响。
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Influence of Thickness on Surface Plasmon Resonance Wavelength of ITO Thin Film
Abstract:Tin-doped indium oxide (ITO) thin films with cubic polycrystalline iron manganese structure were deposited on float glass substrates by the direct current (DC) magnetron sputtering. For controllable modulating the surface plasmon resonance (SPR) wavelength of ITO films, we have prepared ITO films with the different thicknesses by changing the deposition times. As the film thickness gradually increased from 16nm to 271nm, the crystallinities of ITO films are enhanced. And the carrier concentrations of ITO films are increased from 4.79*10^20cm^-3 to 2.41*10^21cm^-3, corresponding the SPR wavelengths show gradual blue shifts from 1802nm to 1204nm. The above results indicated that the controllable modulation of SPR wavelengths were realized in near infrared region by modulating carrier concentrations of the different film thicknesses. The dielectric cross-over wavelength constants of different film thickness of the ITO films were calculated using the Drude free electron gas model, further demonstrating that the SPR wavelengths are availably modulated by corresponding carrier concentrations of film thicknesses.
Keywords: surface plasmas ITO film film thickness carrier concentrations
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