GaAs薄膜发光改性研究进展
首发时间:2018-01-29
摘要:砷化镓(GaAs)作为一种重要的III-V族材料。具有电子迁移率高、本征载流子浓度低、发光效率高等特性,广泛应用半导体光电器件中。对GaAs的发光特性研究可以为GaAs基半导体光电器件的设计提供重要理论依据,而GaAs发光特性的改善对提高GaAs基器件的性能也尤为重要。文章综述了GaAs薄膜发光特性的国内外研究现状,总结了改善GaAs薄膜发光特性的方法,对促进GaAs薄膜在半导体光电器件的应用具有重要的意义。
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Research Progress of Improvement of Emission Properties in GaAs Film
Abstract:GaAs, as an important III-V group material, has been applied to various semiconductor photoelectrical devices for its prominent properties of high carriers mobility, low intrinsic carriers concentration, high luminescent efficiency and so on. The exploration of luminescent properties of GaAs can provide physical basis for the design of GaAs based photoelectrical devices. Moreover, how to improve luminescence properties of GaAs also plays a significant role in enhancing the performance of GaAs based devices. In this review, the progress of luminescence properties of GaAs film was brief introduced. The methods to improve the photoluminescence of GaAs film were expounded. This study is significant for the further application of GaAs film in optoelectronic devices.
Keywords: GaAs film photoluminescence rapid thermal annealing doping surface passivation
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