CMOS图像传感器后段先进工艺制程
首发时间:2018-03-30
摘要:本文研究基于55纳米CMOS制造工艺发展出来的CMOS图像传感器(CMOS Image Sensor, CIS)的生产工艺,对后段工艺进行了优化改良以提高成像效果。并提出两种实现方法:一种是在铝制程(AL)之后引入深沟槽工艺(DT);另一种是在每段金属层碳氮化物(NDC)沉积之后去除不透光的NDC。两种方法均能形成光通道以实现器件工作的要求。
关键词: CMOS图像传感器 先进制程 4场效应管 深沟槽 碳氮化物
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Advanced backend process of CMOS image sensor
Abstract:This paper improved backend process of CMOS image sensor (CIS) which developed from 55nm CMOS manufacturing process in order to improve the imaging results. There are two implementation methods: One is adding deep trench process (DT) after the aluminum process (AL).The other is adding NDC(nitride doped carbon) Remove process after the deposition of NDC of every metal layer. Both methods can form the optical channel and achieve the requirements of devices.
Keywords: CIS, Advance Process, 4T, Deep trench process, NDC
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