Preparation and research of organic thin film transistors based on fullerene high mobility

• 1、College of Science,Changchun University of Science and Technology,Jilin,Changchun 130022
• 2、College of Electronic Information Engineering，Changchun University of Science and Technology,Jilin,Changchun 130022

Abstract：In this paper, C60 organic thin film transistors have been prepared and studied. Fabrication of organic field-effect transistors by vacuum coating technology. Using the 4155c semiconductor parameter tester to make the device characteristic curve, the electrical characteristics of the transistors under different interface modification are analyzed. The performance of the devices modified by the OTS insulation layer at 150 ℃ is optimized by comparing the morphology of different modified devices by AFM. Then the device was modified by CuPc, and the mobility of the device was up to 1.990 cm2/Vs, and the mobility of the device was nearly 2 times higher than that of the device without the electrode modified. There is a high potential barrier between the work function of Al and the LUMO level of C60. The modified layer of the CuPc electrode can effectively reduce the barrier between the electrode and the active layer, which makes the ability of the electron injection to be further enhanced and the mobility is greatly enhanced.

Keywords： OTFT Electrode modification CuPc Mobility