实现功能性氮掺杂石墨烯场效应晶体管的化学可逆开关
首发时间:2018-06-11
摘要:氮掺杂石墨烯可以有效的调节改善石墨烯的电学性质,从而更有利于实现石墨烯的电子器件的应用。在这里,我们报道了二羟基双(乳酸胺)钛(IV)组装在氮掺杂的石墨烯上从而实现场效应晶体管中的化学可逆开关。在Ti分子经过一系列的吸附脱附的处理下,N掺杂的石墨烯晶体管的导电性得到有效的改善。在和未掺杂的石墨烯对比下,N掺杂的石墨烯晶体管表现出了更好的优势,这更有利于发展多功能及高灵敏度的电子器件。
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Reversible Chemical Switches of Functionalized Nitrogen-doped Graphene Field-Effect Transistors
Abstract:Nitrogen doping is a promising way to modulate the electrical properties of graphene to realize graphene-based electronics and promise fascinating properties and applications. Herein, we report a method to noncovalently assembly Titanium(IV)bis(ammoniumlactato)dihydroxide (Ti molecules) on nitrogen-doped graphene to create a reliable hybrids which can be used as a reversible chemical induced switching. As the adsorption and desorption of Ti molecules in sequential treatments, the conductance of the nitrogen-doped graphene transistors was finely modulated. Control experiments with pristine graphene clearly demonstrated the important effort of the nitrogen in this chemical sensor. Under optimized conditions, nitrogen-doped graphene transistors open up new ways to develop multifunctional devices with high sensitivity.
Keywords: Nitrogen doping graphene field effect transistor chemical reversible switching
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